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The reflectivity of TiSi2 films was measured as a function of photon energy E at the Ti K-edge region at a glancing angle θ close to the critical angle θC of total reflection. TiSi2 silicide films (about 30 nm thickness) were prepared by silicidation of Ti thin films deposited on Si(001) substrates. Since the Fresnel reflectivity R(θ,E) is a function of the dispersion δ(E) and of the absorption β(E), the absorption β(E) which carries the XAFS signal can be solved as β(θ,δ,R) for observed reflectivity R and for estimated δ. The dispersion δ(E) is related to the absorption β(E) by the Kramers–Kronig (K–K) relations since the refractive index is n(E) = 1 − δ(E) − iβ(E). β(E) was calculated from the observed reflectivity R(θ,E) using theoretical values for initial δ(E). Titanium K-edge XAFS for TiSi2 was extracted from the reflectivity by `ReflXAFS'.
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