Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

The scanning X-ray nanodiffraction technique is used to map the lattice bending in heteroepitaxial Ge microcrystals grown on high aspect ratio Si pillars produced by thermal strain relaxation. The simulated three-dimensional reciprocal space maps based on finite element calculations are in a good agreement with the measured ones.