Growth of c-plane and m-plane aluminium-doped zinc oxide thin films: epitaxy on flexible substrates with cubic-structure seeds

Epitaxial growth of c-plane and m-plane hexagonal-structure aluminium-doped zinc oxide thin films is achieved for the first time on flexible substrates using cubic-structure seeds. This technique offers transparent electrodes and epitaxy seeds for orientation-controllable ZnO (and GaN) devices.