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J. Appl. Cryst. (2015). 48, 344-349
https://doi.org/10.1107/S1600576715000965

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Measurement of strain in InGaN/GaN nanowires and nanopyramids

T. Stankevič, S. Mickevičius, M. Schou Nielsen, O. Kryliouk, R. Ciechonski, G. Vescovi, Z. Bi, A. Mikkelsen, L. Samuelson, C. Gundlach and R. Feidenhans'l

Measurements are made of strain and composition in InGaN/GaN heterogeneous nanowires and nanopyramids using reciprocal space mapping.

Keywords: nanowires; nanopyramids; InGaN; GaN; core–shell nanostructures; optoelectronics.

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