 | Acta Crystallographica Section A Acta Crystallographica Section A FOUNDATIONS AND ADVANCES |
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![[Figure 1]](ib5003fig1mag.jpg)
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Figure 1
GISAXS intensity distributions and corresponding STEM images shown in insets measured on different films containing Ge QD lattices in amorphous matrices. (a) (Ge+SiO2)/SiO2 multilayer deposited on a flat substrate at 773 K, and annealed at 1073 K after the deposition. (b) (Ge+Al2O3)/Al2O3 multilayer deposited on a flat substrate at 773 K. (c) (Ge+SiO2)/SiO2 multilayer deposited at room temperature and irradiated with 3 MeV O3+ ions. The multilayer was annealed at 1073 K after the irradiation. (d) Ge+Al2O3 continuous thick film deposited on a flat substrate at 773 K. |
![[Figure 1]](ib5003fig1.jpg)
| FOUNDATIONS ADVANCES |
ISSN: 2053-2733
