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Figure 10
Schematic views of the Ge QD lattice formed in a continuous Ge+Al2O3 layer by a self-assembly process. The lattice is described by basis vectors [{\bf a}^{(1,2,3)}]; (a) and (b) depict the plane parallel and perpendicular to the surface, respectively. (c) STEM image of the film cross section. The surface is parallel to the bottom edge of the image. (d) Experimentally measured and (e) simulated GISAXS maps. The parameters of the simulations are given in Table 2[link].

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ISSN: 2053-2733
Volume 68| Part 1| November 2012| Pages 124-138
doi:10.1107/S0108767311040104
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