view article

Figure 10
Schematic views of the Ge QD lattice formed in a continuous Ge+Al2O3 layer by a self-assembly process. The lattice is described by basis vectors [{\bf a}^{(1,2,3)}]; (a) and (b) depict the plane parallel and perpendicular to the surface, respectively. (c) STEM image of the film cross section. The surface is parallel to the bottom edge of the image. (d) Experimentally measured and (e) simulated GISAXS maps. The parameters of the simulations are given in Table 2[link].

ISSN: 2053-2733
Follow Acta Cryst. A
Sign up for e-alerts
Follow Acta Cryst. on Twitter
Follow us on facebook
Sign up for RSS feeds