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Figure 17
(a), (b) Schematic views of the QD arrangement in the QD lattice formed during self-assembled growth of a (Ge+SiO2)/SiO2 multilayer. The lattice formed has a three-dimensional rhombohedral structure with the [111] axis perpendicular to the sample surface. It is described by basis vectors [{\bf a}^{(1,2,3)}]. (c) STEM image showing ordering within a small domain. (d), (e) Measured and simulated GISAXS maps, respectively. The parameters of simulation are given in Table 2[link].

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ISSN: 2053-2733
Volume 68| Part 1| November 2012| Pages 124-138
doi:10.1107/S0108767311040104
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