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Figure 4
Monolayer thickness steps on InGaN quantum wells (with GaN barriers). Yellow lines outlining the quantum wells have been added to guide the eye. HAADF-STEM image at 300 kV using an aberration-corrected FEI TITAN 80-300 electron microscope. Courtesy S. L. Sahonta.

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ISSN: 2053-2733
Volume 69| Part 1| January 2013| Pages 45-50
https://doi.org/10.1107/S0108767312047587
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