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Figure 5
HAADF-STEM image of AlN grown on Si. Note the amorphous region about 2 nm thick at the interface. Cs-corrected FEI Titan 80-300 operated at 300 kV, spot size ∼1 Å. Reproduced with permission from Radtke et al. (2010)BB15. Copyright (2010), American Institute of Physics.

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ISSN: 2053-2733
Volume 69| Part 1| January 2013| Pages 45-50
https://doi.org/10.1107/S0108767312047587
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