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Figure 2
The profiles close to the scattering from the (113) planes from an imperfect (001) gallium arsenide wafer at several orientations in ω, using the same geometry as Fig. 1[link], except that a 4× channel-cut crystal was used to isolate a single wavelength and create a narrow incident beam. The beam size in the scattering plane is 0.3 mm. The undulations of the crystal planes are revealed by the shape of the specular profiles at each ω. The strain variation is emphasized by the broad enhancement peaks. When the specular beam is below the critical angle, it cannot emerge from the crystal, i.e. ω < 52.07° but the enhancement peak is still present.

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ISSN: 2053-2733
Volume 72| Part 1| January 2016| Pages 50-54
doi:10.1107/S2053273315018975
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