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Figure 8
The complex scattering (logarithmic scale) close to the 113 reflection from a Si (001) wafer, with a 46 nm epitaxial layer of Si0.21Ge0.79 on top, obtained with a high-resolution diffractometer, courtesy of A. Kharchenko and J. Woitok. The fringing relates to the thickness of the SiGe layer, which can all be explained by conventional (dynamical) theory. The various features determined by the instrument and diffraction geometry are given in the figure and can be related to those in Fig. 7[link](a). The streak of intensity at constant 2θB cannot be explained with conventional theory but is predicted by the new theory and corresponds to an arc in Fig. 1[link].

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ISSN: 2053-2733
Volume 74| Part 5| September 2018| Pages 457-465
https://doi.org/10.1107/S2053273318007489
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