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Figure 3
∑|Fth(h)|2/ ∑|Fmodel(h)|2 versus resolution [sin θ/λ−1), d (Å)] for the IAM and TAAM models applied to the target crystal structure: (top) electron |F(h)| (Å), (bottom) X-ray |F(h)| (e). | F(h)| were computed using the target atomic positions and thermal parameters (dynamic) or with target atomic positions only (static). |F(h)| were divided into 50 equally populated bins over the range of resolutions.

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