Silicon allotropes by large-volume high-pressure techniques: crystal growth mechanisms, phase diagrams and hexagonal nanostructured Si-6H by in situ X-ray diffraction and computational methods

Courac, A.; Le Godec, Y.

doi:10.1107/S2052520626004026

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 1
The maximal theoretical efficiency of tandem cells (Bremner et al., 2008

). Si forms and Ge are shown as white lines. Vertical and horizontal lines correspond to low- and high-bandgap semiconductors of the cell, respectively. Ovals encircle mentioned in the text examples of Ge+Si₂₄ and Si-3C+Si₁₃₆.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 82| Part 3| June 2026| Pages 280-298

https://doi.org/10.1107/S2052520626004026

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