Silicon allotropes by large-volume high-pressure techniques: crystal growth mechanisms, phase diagrams and hexagonal nanostructured Si-6H by in situ X-ray diffraction and computational methods

Courac, A.; Le Godec, Y.

doi:10.1107/S2052520626004026

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 7
In situ resistance measurements. (a) Raw data on qualitative HPHT calorimetry. Black arrow shows pressure evolution of maximum power corresponding to melting of pure Si. Red arrows indicate the deviation from resistance–power linearity due to the formation of a metallic (clathrate) phase. (b) Tentative isoplethic section of a phase diagram obtained in experiments with (in black) Na:Si = 1:5.5 (Jouini et al., 2016

) and (in red) at Na:Si = 1:6. Blue arrows show stability domain evolution (sI, sII and Na₄Si₂₄), with Na:Si ratio from 1:5.7 (black) to 1.6 (red) .

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 82| Part 3| June 2026| Pages 280-298

https://doi.org/10.1107/S2052520626004026

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