Silicon allotropes by large-volume high-pressure techniques: crystal growth mechanisms, phase diagrams and hexagonal nanostructured Si-6H by in situ X-ray diffraction and computational methods

Courac, A.; Le Godec, Y.

doi:10.1107/S2052520626004026

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 8
(a) High-resolution TEM image of Si-III grains obtained by direct phase transformations of pure Si (numerous stacking faults) and (b) by crystallization in the Na–Si system (zero stacking faults). (c) Electronic structure of BC8 silicon (Si-III). (d) Crystal structure of BC8 silicon (Si-III).

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 82| Part 3| June 2026| Pages 280-298

https://doi.org/10.1107/S2052520626004026

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