Silicon allotropes by large-volume high-pressure techniques: crystal growth mechanisms, phase diagrams and hexagonal nanostructured Si-6H by in situ X-ray diffraction and computational methods

Courac, A.; Le Godec, Y.

doi:10.1107/S2052520626004026

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 9
(a) Sequences of the evolution of Si-IV polytypes from least stable Si-2H (100% of hexagonality) to stable Si-3C (0% of hexagonality) and (b) in situ experimental observation of Si-4H to Si-6H transformation by X-ray diffraction during heating under vacuum. (c) Rietveld refinement of nanostructured Si-6H allotrope.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 82| Part 3| June 2026| Pages 280-298

https://doi.org/10.1107/S2052520626004026

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