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Figure 2
Crystals of (a) CeAlSi and (b) CeAlGe grown using the flux method. Below each image is the corresponding Laue diffraction pattern obtained by back-scattering X-rays from the largest crystal face. The observed fourfold symmetry indicates that the diffraction pattern corresponds to the [001] crystallographic direction, confirming that the largest face is perpendicular to the c axis of the crystal. |

journal menu![[Figure 2]](vel5001fig2.jpg)
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