organic compounds
2,5-Dichlorothiophene 1,1-dioxide
aDepartment of Chemistry and Materials Science Program, University of New Hampshire, Durham, NH 03824-3598, USA
*Correspondence e-mail: glen.miller@unh.edu
The complete molecule of the title compound, C4H2Cl2O2S, is generated by crystallographic twofold symmetry, with the S atom lying on the rotation axis. In the crystal, the molecules are linked by C—H⋯O hydrogen bonds..
Related literature
For a related thiophene-1,1-dioxide structure, see: Douglas et al. (1993). For the synthetic utility and related applications of thiophene-1,1-dioxides, see: Moiseev et al. (2006); Nakayama & Sugihara (1999); Shul'ts et al. (2003); Lou et al. (2002).
Experimental
Crystal data
|
Refinement
|
Data collection: GIS (Bruker, 2007); cell SAINT (Bruker, 2007); data reduction: SAINT (Bruker, 2007); program(s) used to solve structure: SHELXS97 (Sheldrick, 2008); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008); molecular graphics: SHELXTL (Sheldrick, 2008); software used to prepare material for publication: SHELXTL.
Supporting information
10.1107/S1600536809050776/fl2274sup1.cif
contains datablocks I, global. DOI:Structure factors: contains datablock I. DOI: 10.1107/S1600536809050776/fl2274Isup2.hkl
The title compound was prepared according to a related literature procedure (Lou et al., 2002) as illustrated in Figure 6. Thus, 2,5-dichlorothiophene was oxidized in 58% yield using a mixture of trifluoroacetic anhydride, hydrogen peroxide and sulfuric acid. The title compound was purified by silica gel δ 6.74 (s, 2H); 13C NMR (100 MHz, CDCl3) δ 123.45 (CH), 131.08 (CCl). An X-ray grade crystal was obtained by slow evaporation of a dichloromethane-hexane solution.
(30% dichloromethane - 70% hexane eluent). 1H NMR (400 MHz, CDCl3)Data collection: GIS (Bruker, 2007); cell
SAINT (Bruker, 2007); data reduction: SAINT (Bruker, 2007); program(s) used to solve structure: SHELXS97 (Sheldrick, 2008); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008); molecular graphics: SHELXTL (Sheldrick, 2008); software used to prepare material for publication: SHELXTL (Sheldrick, 2008).C4H2Cl2O2S | F(000) = 368 |
Mr = 185.02 | Dx = 1.750 Mg m−3 |
Monoclinic, C2/c | Mo Kα radiation, λ = 0.71073 Å |
Hall symbol: -C 2yc | Cell parameters from 1863 reflections |
a = 7.588 (2) Å | θ = 3.3–24.8° |
b = 10.584 (3) Å | µ = 1.14 mm−1 |
c = 8.745 (3) Å | T = 296 K |
β = 90.275 (9)° | Block, colourless |
V = 702.4 (3) Å3 | 0.50 × 0.40 × 0.30 mm |
Z = 4 |
Bruker SMART X2S diffractometer | 622 independent reflections |
Radiation source: micro-focus sealed tube | 549 reflections with I > 2σ(I) |
Doubly curved silicon crystal monochromator | Rint = 0.028 |
ω scans | θmax = 25.0°, θmin = 3.3° |
Absorption correction: multi-scan (SADABS; Bruker, 2007) | h = −9→8 |
Tmin = 0.590, Tmax = 0.726 | k = −12→12 |
3352 measured reflections | l = −10→10 |
Refinement on F2 | Primary atom site location: structure-invariant direct methods |
Least-squares matrix: full | Secondary atom site location: difference Fourier map |
R[F2 > 2σ(F2)] = 0.035 | Hydrogen site location: inferred from neighbouring sites |
wR(F2) = 0.094 | H-atom parameters constrained |
S = 1.12 | w = 1/[σ2(Fo2) + (0.0473P)2 + 0.6008P] where P = (Fo2 + 2Fc2)/3 |
622 reflections | (Δ/σ)max = 0.013 |
42 parameters | Δρmax = 0.21 e Å−3 |
0 restraints | Δρmin = −0.31 e Å−3 |
C4H2Cl2O2S | V = 702.4 (3) Å3 |
Mr = 185.02 | Z = 4 |
Monoclinic, C2/c | Mo Kα radiation |
a = 7.588 (2) Å | µ = 1.14 mm−1 |
b = 10.584 (3) Å | T = 296 K |
c = 8.745 (3) Å | 0.50 × 0.40 × 0.30 mm |
β = 90.275 (9)° |
Bruker SMART X2S diffractometer | 622 independent reflections |
Absorption correction: multi-scan (SADABS; Bruker, 2007) | 549 reflections with I > 2σ(I) |
Tmin = 0.590, Tmax = 0.726 | Rint = 0.028 |
3352 measured reflections |
R[F2 > 2σ(F2)] = 0.035 | 0 restraints |
wR(F2) = 0.094 | H-atom parameters constrained |
S = 1.12 | Δρmax = 0.21 e Å−3 |
622 reflections | Δρmin = −0.31 e Å−3 |
42 parameters |
Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes. |
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger. |
x | y | z | Uiso*/Ueq | ||
Cl1 | 0.32276 (10) | 0.08665 (9) | 0.07774 (10) | 0.0906 (4) | |
S1 | 0.0000 | 0.15554 (8) | 0.2500 | 0.0529 (3) | |
O1 | −0.0844 (3) | 0.2242 (2) | 0.1299 (2) | 0.0779 (6) | |
C1 | 0.1415 (3) | 0.0379 (3) | 0.1743 (3) | 0.0582 (6) | |
C2 | 0.0827 (4) | −0.0754 (3) | 0.2059 (3) | 0.0677 (8) | |
H2 | 0.1398 | −0.1490 | 0.1757 | 0.081* |
U11 | U22 | U33 | U12 | U13 | U23 | |
Cl1 | 0.0634 (5) | 0.1157 (8) | 0.0932 (6) | 0.0154 (4) | 0.0365 (4) | 0.0078 (5) |
S1 | 0.0513 (5) | 0.0506 (5) | 0.0570 (5) | 0.000 | 0.0174 (4) | 0.000 |
O1 | 0.0812 (13) | 0.0728 (12) | 0.0799 (13) | 0.0258 (11) | 0.0188 (10) | 0.0181 (10) |
C1 | 0.0518 (14) | 0.0674 (15) | 0.0553 (14) | 0.0134 (12) | 0.0115 (11) | 0.0005 (12) |
C2 | 0.0788 (19) | 0.0587 (15) | 0.0657 (17) | 0.0167 (14) | 0.0042 (14) | −0.0020 (13) |
Cl1—C1 | 1.698 (3) | S1—C1i | 1.774 (2) |
S1—O1i | 1.427 (2) | C1—C2 | 1.310 (4) |
S1—O1 | 1.427 (2) | C2—C2i | 1.476 (6) |
S1—C1 | 1.774 (2) | C2—H2 | 0.9300 |
O1i—S1—O1 | 118.8 (2) | C2—C1—Cl1 | 131.4 (2) |
O1i—S1—C1 | 111.19 (13) | C2—C1—S1 | 110.9 (2) |
O1—S1—C1 | 110.68 (12) | Cl1—C1—S1 | 117.74 (16) |
O1i—S1—C1i | 110.68 (12) | C1—C2—C2i | 113.68 (16) |
O1—S1—C1i | 111.19 (13) | C1—C2—H2 | 123.2 |
C1—S1—C1i | 90.87 (18) | C2i—C2—H2 | 123.2 |
Symmetry code: (i) −x, y, −z+1/2. |
D—H···A | D—H | H···A | D···A | D—H···A |
C2—H2···O1ii | 0.93 | 2.52 | 3.367 (4) | 152 |
Symmetry code: (ii) x+1/2, y−1/2, z. |
Experimental details
Crystal data | |
Chemical formula | C4H2Cl2O2S |
Mr | 185.02 |
Crystal system, space group | Monoclinic, C2/c |
Temperature (K) | 296 |
a, b, c (Å) | 7.588 (2), 10.584 (3), 8.745 (3) |
β (°) | 90.275 (9) |
V (Å3) | 702.4 (3) |
Z | 4 |
Radiation type | Mo Kα |
µ (mm−1) | 1.14 |
Crystal size (mm) | 0.50 × 0.40 × 0.30 |
Data collection | |
Diffractometer | Bruker SMART X2S diffractometer |
Absorption correction | Multi-scan (SADABS; Bruker, 2007) |
Tmin, Tmax | 0.590, 0.726 |
No. of measured, independent and observed [I > 2σ(I)] reflections | 3352, 622, 549 |
Rint | 0.028 |
(sin θ/λ)max (Å−1) | 0.595 |
Refinement | |
R[F2 > 2σ(F2)], wR(F2), S | 0.035, 0.094, 1.12 |
No. of reflections | 622 |
No. of parameters | 42 |
H-atom treatment | H-atom parameters constrained |
Δρmax, Δρmin (e Å−3) | 0.21, −0.31 |
Computer programs: GIS (Bruker, 2007), SAINT (Bruker, 2007), SHELXS97 (Sheldrick, 2008), SHELXL97 (Sheldrick, 2008), SHELXTL (Sheldrick, 2008).
D—H···A | D—H | H···A | D···A | D—H···A |
C2—H2···O1i | 0.93 | 2.52 | 3.367 (4) | 152 |
Symmetry code: (i) x+1/2, y−1/2, z. |
Acknowledgements
The authors thank the National Science Foundation for support of this work through the EPSCoR Research Infrastructure Improvement program (NSF 0432060) and the Center for High-rate Nanomanufacturing (NSF EEC-0425826).
References
Bruker (2007). GIS, SADABS and SAINT. Bruker AXS Inc., Madison, Wisconsin, USA. Google Scholar
Douglas, G., Frampton, C. S. & Muir, K. W. (1993). Acta Cryst. C49, 1197–1199. CSD CrossRef CAS Web of Science IUCr Journals Google Scholar
Lou, Y., Chang, J., Jorgensen, J. & Lemal, D. M. (2002). J. Am. Chem. Soc. 124, 15302–15307. Web of Science CSD CrossRef PubMed CAS Google Scholar
Moiseev, A. M., Balenkova, E. S. & Nenajdenko, V. K. (2006). Russ. Chem. Rev. 75, 1015–1048. CrossRef CAS Google Scholar
Nakayama, J. & Sugihara, Y. (1999). Top. Curr. Chem. 205,131–195. CrossRef CAS Google Scholar
Sheldrick, G. M. (2008). Acta Cryst. A64, 112–122. Web of Science CrossRef IUCr Journals Google Scholar
Shul'ts, E. E., Vafina, G. V., Andreev, G. N. & &Tolstikov, G. A. (2003). Kislorod I Serusoderzhashchie Geterotsikly, 1, 478–487. CAS Google Scholar
This is an open-access article distributed under the terms of the Creative Commons Attribution (CC-BY) Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.
Thiophene 1,1-dioxides are important building blocks in modern organic synthesis and materials chemistry (Moiseev et al., 2006). In particular, thiophene 1,1-dioxides have been utilized as Diels-Alder dienes in the construction of larger molecules (Nakayama & Sugihara, 1999) including biologically active compounds (Shul'ts et al., 2003) and halogenated derivatives (Lou et al., 2002). The crystal structure for tetrachlorothiophene-1,1-dioxide has also been solved (Douglas et al., 1993).
Figure 1 shows the displacement ellipsoid diagram with appropriate atomic labels. Although there is only one unique H-bonding interaction in the crystal structure (Figure 2), each molecule is in fact linked to four others through symmetry related versions of this same H-bond (Table 1). Each sulfone oxygen (O1 and O1A) H-bonds to one hydrogen atom (i.e., O1 – H, 2.520 (2) Å; O1A – H, 2.520 (2) Å). Likewise, each hydrogen atom H-bonds to one sulfone oxygen atom. The sulfone groups do not interdigitate with the methines of an adjacent molecule.
Each unit cell contains two complete molecules. Looking down the a axis of the unit cell (Figure 3), the molecules in the crystal structure are arranged head to tail (with the sulfone end being the head) in horizontal rows, with alternating rows of inverted directionality (i.e., sulfone head groups pointing "right" in one row and pointing "left" in adjacent rows). Likewise, looking down the b axis of the unit cell (Figure 4), the molecules are arranged head to tail in vertical columns, with alternating columns of inverted directionality (i.e., sulfone head groups pointing "forward" in one column and pointing "backward" in adjacent columns). The inverted directionality between adjacent rows in Figure 3 and adjacent columns in Figure 4 is further illustrated upon looking down the c axis (Figure 5) where one observes molecular stacks with alternating up-down orientations of the sulfone head groups. This arrangement of molecules is driven by the 4:1 H-bonding network, as previously noted. However, relatively weak π-π stacking interactions also influence the arrangement of molecules, albeit to a lesser extent. Carbon atoms of closest contact in the molecular stacks are approximately 4.1 Å apart (Table 2) indicating weak π-π stacking interactions (the interlayer spacing in graphite is 3.4 Å) that can only be minimally responsible for the observed ordering of molecules.