M+M3+2As(HAsO4)6 (M+M3+ = TlGa, CsGa, CsAl): three new metal arsenates containing AsO6 octa­hedra

Schwendtner, K.; Kolitsch, U.

doi:10.1107/S2056989018010721

Acta Crystallographica Section E
Acta Crystallographica
Section E CRYSTALLOGRAPHIC COMMUNICATIONS

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Figure 4
Tl positional disorder and Tl—O bonding scheme for TlGa₂As(HAsO₄)₆ viewed along a (a) and c (b). Displacement ellipsoids for Tl are drawn at the 80% probability level.

CRYSTALLOGRAPHIC
COMMUNICATIONS

ISSN: 2056-9890

Volume 74| Part 8| August 2018| Pages 1163-1167

https://doi.org/10.1107/S2056989018010721

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