High-pressure synthesis and crystal structure of SrGa4As4

Weippert, V.; Johrendt, D.

doi:10.1107/S2056989019013562

Acta Crystallographica Section E
Acta Crystallographica
Section E CRYSTALLOGRAPHIC COMMUNICATIONS

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Figure 4
Ga₂As₆ groups with disordered Ga positions having an occupancy of 50%. Displacement ellipsoids are drawn at the 95% probability level. [Symmetry codes: (i) −x + 2, −x + y + 1, −z + $[{5\over 3}]$ ; (ii) y, x, −z + 1; (iii) x, y + 1, z + 1; (iv) y + 1, x + 1, −z + 1; (v) y + 1, x, −z + 1; (vi) −y + 1, x − y + 1 z + $[{2\over 3}]$ ; (vii) −y + 1, x − y, z + $[{2\over 3}]$ ; (viii) −y + 2, x − y + 1, z + $[{2\over 3}]$ ; (ix) −x + 2, −x + y + 2, −z + $[{2\over 3}]$ .]

CRYSTALLOGRAPHIC
COMMUNICATIONS

ISSN: 2056-9890

Volume 75| Part 11| November 2019| Pages 1643-1645

https://doi.org/10.1107/S2056989019013562

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