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Figure 1
Atomic concentration profile of Ne and He as determined by SRIM calculations (Ziegler & Biersack, 2003BB24) for 5×1016 ions cm[^{-2}] implanted in Si at 50 keV. The variation of the penetration depth [equation (4)[link]] of the incident X-ray beam in Si at [\lambda = 0.139] nm is also shown as a function of the grazing angle.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 40| Part s1| November 2007| Pages s350-s354
doi:10.1107/S0021889806043755
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