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Figure 4
(a) Two-dimensional experimental GISAXS pattern of Si(001) He-implanted at 873 K with the incident beam along the Si[110] direction. (b) Two-dimensional simulated GISAXS pattern assuming a log-normal distribution of {111} faceted cavities associated with elongated {113} defects.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 40| Part s1| November 2007| Pages s350-s354
doi:10.1107/S0021889806043755
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