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Figure 5
(a) Two-dimensional GIXS pattern measured at αi = 0.20° for an S-docosanylcysteine thin film deposited on a silicon substrate. (b) Out-of-plane scattering profile extracted from the GIXS pattern in (a) along the αf direction at 2θf = 0°. (c) In-plane scattering profile extracted from the GIXS in (a) along the 2θf direction at αf = 0.20°. The open circles in (b) and (c) represent the measured data, while the solid lines were obtained by fitting the data according to the GIXS formula. (d) A calculated two-dimensional GIXS pattern with structural parameters (listed in Table 1[link]) obtained by analyzing the GIXS data in (a), using the derived formula.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 40| Part s1| January 2007| Pages s669-s674
doi:10.1107/S0021889806056056
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