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Figure 4
(a) A representative X-ray reflectivity profile of an SiOCH film deposited with Rfr = 85% and subsequently annealed at 673 K. The symbols are the measured data and the solid line represents the fit curve assuming a homogeneous electron density distribution within the film except for a thin surface skin layer, in which the electron density is slightly different. The inset shows a magnification of the region around the two critical angles: αc,f is the critical angle of the film and αc,s is the critical angle of the Si substrate. (b) A model of the electron density distribution across the film thickness between the silicon substrate and air, which gives the best fit for the XR profile in (a).

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 40| Part s1| December 2007| Pages s614-s619
doi:10.1107/S0021889806054124
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