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Figure 5
(a) Representative XR profiles of C-PNME films (22.3 and 140.6 nm thick), which were annealed at 473 K. (b) Representative XR profiles of R-PNBE films (21.1 and 125.0 nm thick), which were annealed at 473 K. The symbols are the measured data and the solid line represents the fit curve assuming a homogeneous electron density distribution within the film except for a thin surface layer, in which the electron density is slightly different. The inset shows a magnification of the region around the two critical angles: αc,f and αc,s are the critical angles of the film and the silicon substrate respectively.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 40| Part s1| December 2007| Pages s620-s625
doi:10.1107/S0021889806052289
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