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Figure 3
(a), (b) In-plane scattering profiles at αf = 0.17° and (c) out-of-plane scattering profiles at 2θf = 0.25° of 2D GISAXS patterns obtained during heating (2.0 K min−1) of a PMSSQ precursor film loaded with 10 wt% PCL6 porogen under vacuum: the symbols represent the measured data, and the solid lines were obtained by fitting the data with the GISAXS formula. αc,f and αc,s indicate the critical angles of the dielectric film and Si substrate respectively.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 40| Part s1| January 2007| Pages s631-s636
doi:10.1107/S0021889806055865
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