Journal of Applied Crystallography
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Crystallography
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Figure 10
{113} defects in an Si thin film. (
a
) HRTEM image in cross section in the [011] zone axis and (
b
) power spectrum. The defects are situated in the (3
1) plane as shown by the streaks in the power spectrum.
JOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 42
|
Part 2
|
January 2009
|
Pages 242-252
doi:10.1107/S0021889808042131
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The IUCr is a scientific union serving the interests of crystallographers and other scientists employing crystallographic methods.