Stacking fault model of ∊-martensite and its DIFFaX implementation

Martin, S.; Ullrich, C.; Šimek, D.; Martin, U.; Rafaja, D.

doi:10.1107/S0021889811019558

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 2
(a) A part of the XRD pattern of $[\varepsilon]$ -martensite (described in the space group P6₃/mmc) simulated using MAUD, which illustrates the influence of 4% SFs on the broadening of the hexagonal XRD lines 100, 002 and 101. (b) Comparison of the experimental XRD pattern from Fig. 1

(open circles) with the XRD pattern calculated for a mixture of $[\alpha]$ ′-martensite, austenite and $[\varepsilon]$ -martensite (red dashed line). Two additional microstructure models were applied for calculation of the XRD line broadening in $[\varepsilon]$ -martensite: the size–strain model according to Delhez et al. (1993

), which is depicted by the green line with symbols, and the Warren (1990

) model containing 0.9% of intrinsic stacking faults (black line).

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 44| Part 4| June 2011| Pages 779-787

doi:10.1107/S0021889811019558

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