Covariant description of X-ray diffraction from anisotropically relaxed epitaxial structures

Zhylik, A.; Benediktovitch, A.; Feranchuk, I.; Inaba, K.; Mikhalychev, A.; Ulyanenkov, A.

doi:10.1107/S0021889813006171

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 1
Models of partly relaxed epitaxial Ge(001) layers on Si(001) substrates. (a) Crystal lattices of a relaxed Ge(001) layer on an Si(001) substrate. (b) Conventional relations of a Ge(001) epitaxial layer on Si(001). a^S and c^S are the lattice constants of the bottom Si(001) layer. a^L,R and c^L,R are the relaxed lattice constants of the top Ge(001) layer. a^L and c^L are the actual or strained lattice constants of the top Ge(001) layer. (c) Coincidence-site lattices of a Ge(001) epitaxial layer on Si(001). Axes X and Y correspond to sample basis axes S₁ and S₂. Relaxation vectors R₁ and R₂ have directions $[\boldPhi_{1}]$ and $[\boldPhi_{2}]$ of the sample principal basis and length values corresponding to relaxation degree. Gray circles mark out coinciding pairs of lattice nodes – anchors A¹{Ge[110]; Si[110]}, A²{Ge[ $[\overline{1}10]$ ]; Si[ $[\overline{1}10]$ ]}. (d) Demonstration of anisotropic relaxation of an epitaxial layer. Relaxation vectors R₁ and R₂ show the directions of relaxation and strain degree.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 46| Part 4| June 2013| Pages 919-925

doi:10.1107/S0021889813006171

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