Covariant description of X-ray diffraction from anisotropically relaxed epitaxial structures

Zhylik, A.; Benediktovitch, A.; Feranchuk, I.; Inaba, K.; Mikhalychev, A.; Ulyanenkov, A.

doi:10.1107/S0021889813006171

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 2
Sketch of an a-ZnO epitaxial layer on r-sapphire. (a) Mutual orientation of crystallographic cells of an a-ZnO heteroepitaxial layer on r-sapphire substrate. (b) Coincidence-site lattices of an interface ZnO(110) epitaxial layer on Al₂O₃( $[1\overline{1}2]$ ) with anchors A¹{ZnO[003]; Al₂O₃[ $[\overline{1} 1 1]$ ]}, A²{ZnO[ $[\overline{1}10]$ ]; Al₂O₃[110]} of a-ZnO on r-sapphire.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 46| Part 4| June 2013| Pages 919-925

doi:10.1107/S0021889813006171

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