Covariant description of X-ray diffraction from anisotropically relaxed epitaxial structures

Zhylik, A.; Benediktovitch, A.; Feranchuk, I.; Inaba, K.; Mikhalychev, A.; Ulyanenkov, A.

doi:10.1107/S0021889813006171

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 3
Lattice parameter evaluation of an a-ZnO layer on r-sapphire. (a) Measured reflections 004, 110 and $[1\overline{1} 0]$ and crystallographic axes a, b and c of an a-ZnO heteroepitaxial layer on r-sapphire substrate. (b) Dependency of relaxations R₁, R₂, strains $[\epsilon_1]$ , $[\epsilon_2]$ and mismatches $[\xi_1]$ , $[\xi_2]$ in two azimuthal directions [001] and $[[1 \overline{1} 0]]$ of an a-ZnO heteroepitaxial layer on r-sapphire on growth temperature. (c) Dependency of crystallographic cell parameters (a, b, c, γ) of an a-ZnO heteroepitaxial layer on r-sapphire on growth temperature. Bulk (relaxed) cell parameters (a, b, c) of ZnO are shown for eye guidance.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 46| Part 4| June 2013| Pages 919-925

doi:10.1107/S0021889813006171

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