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Figure 1
SEM micrographs of two samples with 27 nm-thick Si islands of 125 nm diameter on 145 nm SiO2 in the pre-deposited state (a) and after Ge deposition and annealing at 1023 K (b). |
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Figure 1
SEM micrographs of two samples with 27 nm-thick Si islands of 125 nm diameter on 145 nm SiO2 in the pre-deposited state (a) and after Ge deposition and annealing at 1023 K (b). |