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Figure 6
Comparison of reciprocal space maps of samples: (a) Si islands only, (b) after direct Ge deposition, (c) after Ge deposition on an Si0.4Ge0.6 buffer layer and (d) after Ge deposition on an Si0.7Ge0.3 buffer layer in the as-deposited state measured at αi = 0.12°.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 46| Part 4| June 2013| Pages 868-873
doi:10.1107/S0021889813003518
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