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Figure 3
RSMs measured around InAs and GaAs 111 reflections on samples (A)–(C) grown on defective SiOx layers with increasing doping concentration: apart from the substrate and InAs reflections, an additional reflection appeared for the doped samples (red arrows). Sample (D) was grown on the `good' surface.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 46| Part 4| June 2013| Pages 893-897
doi:10.1107/S0021889813010522
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