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Figure 1
(a) A GaAs NW with growth axis parallel to the surface normal: diameter (W) ≃ 150 nm and height (H) ≃ 6 µm. (b) Top view of the GID geometry for a single NW for reflection [2\overline 20].

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 46| Part 4| June 2013| Pages 887-892
doi:10.1107/S0021889813004226
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