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Figure 5
(a) A sketch of the NW and the substrate probed around the Au-implanted area. (b) Integrated diffracted intensity as a function of qr for the three analyzed regions in the substrate. Experimental and fitted data are shown. Here, and in the following graphs (c) and (d), the value of the uncompressed GaAs (3.142 ± 0.002 Å−1) is represented by a gray rectangular area. (c) Normalized integrated diffracted intensity as a function of qr for three different positions (A, B and C) along the same NWs. (d) Normalized integrated diffracted intensity as a function of qr for three different NWs, at position B.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 46| Part 4| June 2013| Pages 887-892
doi:10.1107/S0021889813004226
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