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Figure 4
Diffraction peaks of the θ scan in (a) the two-wave case (Bragg reflection 0002) and (b) the three-wave case ([1\overline 100/\overline 1101] combination) for GaN layers with randomly distributed dislocations (solid lines) and rectilinear threading dislocations (dashed lines).

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 46| Part 4| June 2013| Pages 861-867
doi:10.1107/S0021889813011709
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