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Figure 8
Lateral cuts of the GISAXS patterns measured in the laboratory (thick line) and at the synchrotron beamline (thin line), obtained by integration in the intervals q z = 0.5–1 nm−1 and q z = 1–1.5 nm−1, respectively.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 46| Part 6| December 2013| Pages 1544-1550
https://doi.org/10.1107/S0021889813024138
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