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Figure 2
The two-dimensional map distributions of the (a) Ge fluorescence intensities, (b) Ge diffracted intensities and (c) Ge equivalent deviatoric strain. (d) A comparison between the equivalent deviatoric strain and fluorescence profiles in the same region of the sample, which is indicated by the green lines in (a) and (c). In detail (e), an X-ray nanotomography absorption contrast image of the analyzed Ge layer.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 48| Part 2| February 2015| Pages 357-364
doi:10.1107/S1600576715002447
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