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Figure 1
Example of ω–2Θ scans measured on four Si(100) samples with Ni deposition. The samples were placed on the stage with slightly different (±2.5°) in-plane orientation. The angular range near the Si 200 reflection is magnified in the insert. Broad side peaks and varying intensity of the Si 200 peak are marked by arrows.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 48| Part 2| March 2015| Pages 528-532
doi:10.1107/S1600576715004732
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