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Figure 4
2Θ–Φ mapping of the Si 200 reflection near the [011] in-plane direction measured (a) in high-resolution and (b) in low-resolution mode. The dotted structure of some streaks is caused by the finite step widths of 0.02 and 0.1° for 2Θ and Φ, respectively. The bar between ΔΦ = ±2.5° marks approximately the Φ range within which the measurements shown in Fig. 1[link] were performed.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 48| Part 2| March 2015| Pages 528-532
doi:10.1107/S1600576715004732
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