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Figure 4
Simulated RSMs, showing the effects of finite angular resolution of receiving optics (a), incident beam divergence (c) and beam nonmonochromaticity (e). The ideal sample model with q corresponding to the 224 reflection of (001)-oriented silicon is used. Insets (b), (d) and (f) show geometrical schemes of streak formation. M is the monochromator streak, A is the analyzer streak and W is the wavelength streak. All RSMs presented in this paper use log-scale for intensity.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 48| Part 3| June 2015| Pages 679-689
https://doi.org/10.1107/S1600576715006986
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