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Figure 6
Measured (a), (c), (e) and simulated (b), (d), (f) maps [RSMs for (a)–(d), and diffracted beam intensity distribution maps for two-dimensional detector (e), (f)] for the 004 reflection of a (001)-oriented silicon sample. See text for explanations of the diffractometer configurations used. (g) Vertical distribution of the detected intensity for the maps (e), shown with a black solid line with circles, and (f), shown with a gray solid line with stars. Symbols (circles and stars) correspond to the positions and detected intensities of the detector pixels. The dotted line shows the intensity distribution for the same diffractometer configuration without source misalignment and the dashed line shows the central pixel of the detector.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 48| Part 3| June 2015| Pages 679-689
https://doi.org/10.1107/S1600576715006986
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