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Figure 10
(a) Effect of the position of a perfect screw dislocation in a 30 × 30 × 30 nm copper crystal in a Wulff geometry for g||b (g = 2[\overline2]0). In the vicinity of the crystal centre the intensity distribution is altered, and as the dislocation moves towards an edge of the crystal its characteristic signature completely vanishes. (b) Effect of the position of a stacking fault in a 30 × 30 × 30 nm copper crystal in a Wulff geometry for g = 11[\overline 1]. The stacking fault position strongly affects the fringe intensity and period, and the intensity and splitting of the Bragg reflection. (c) Intensity along [111] for different positions of the stacking fault in the crystallite. The selected area of the reciprocal space is kept to the same value in all figures and is equal to 0.045 × 0.0675 Å−1.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 48| Part 3| June 2015| Pages 621-644
https://doi.org/10.1107/S1600576715005324
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