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Figure 3
Edge dislocation in a 30 × 30 × 30 nm copper crystal. (a) and (c) ux component of the atomic displacement field for both initial and relaxed configurations. (b) and (d) Perfect edge dislocation with b = [\textstyle{1 \over 2}][[1 {\overline 1} 0]] and t = [[1 1{\overline 2} ]] and dissociation of the perfect dislocation into two Shockley partials in the (111) plane. Only the defect, edge and corner atoms are shown. Calculated CXD pattern for a perfect (e) and dissociated (f) dislocations. (g) Intensity along [111] for perfect and dissociated dislocations (log scale) with g·b = 0 and g·(b × t) = 0 (g = [2 2 {\overline 4}]). Perfect (h) and dissociated dislocations (i) and intensity along [111] for both cases (j) with g·b = 0 and g·(b × t) ≠ 0 (g = 224). Perfect (k) and dissociated dislocations (l) and intensity along [111] for a defect-free crystal and dissociated dislocation (log scale) (m) with g||b (g = [2 {\overline 2} 0]). Perfect (n) and dissociated dislocations (o) and intensity along [111] for both cases (p) with g·bp (g = [2 {\overline 4} 2]). The selected area of the reciprocal space is kept to the same value in all figures and is equal to 0.045 × 0.0675 Å−1.

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