Signature of dislocations and stacking faults of face-centred cubic nanocrystals in coherent X-ray diffraction patterns: a numerical study

Dupraz, M.; Beutier, G.; Rodney, D.; Mordehai, D.; Verdier, M.

doi:10.1107/S1600576715005324

Journal of Applied Crystallography Journal of Applied
Crystallography

IUCr IT WDC

home archive editors for authors for readers submit subscribe open access

view article

Figure 6
Relaxation for a crystal with a low SFE (silver). u_x component of the atomic displacement after 900 relaxation steps (a), 3000 relaxation steps (b) and full relaxation (c). (d)–(f) Corresponding CXD pattern for g·b = 0 (g = 224). (g)–(h) Intensity along [ $[1 {\overline 1} 0]$ ] and [111] (log scale). The selected area of the reciprocal space is kept to the same value in all figures and is equal to 0.045 × 0.0675 Å⁻¹.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 48| Part 3| June 2015| Pages 621-644

https://doi.org/10.1107/S1600576715005324

Open

access

Follow J. Appl. Cryst.

Search IUCr Journals		doi		Advanced search
Author		volume	page