Characterization of defects in mono-like silicon for photovoltaic applications using X-ray Bragg diffraction imaging

Tsoutsouva, M.G.; Oliveira, V.A.; Baruchel, J.; Camel, D.; Marie, B.; Lafford, T.A.

doi:10.1107/S1600576715004926

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 5
220 INT and PPOS maps of a ( $[1{\overline 1}1]$ ) mono-like Si crystal in transmission mode (λ = 50 pm). Sample-to-camera distance 35 mm, 1.87 µm pixel size. The dislocation indicated by a has a dominant screw character, while the one indicated by b has a strong edge component.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 48| Part 3| June 2015| Pages 645-654

https://doi.org/10.1107/S1600576715004926

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