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Figure 8
(a) Minority carrier lifetime map of a vertical cut across the seed junction of a mono-like silicon ingot and (b) optical microscopy image of the solidified area between two seeds on the bottom of the crucible. The sample was mechanically polished on both sides down to a thickness of 0.4 mm and was chemically etched with standard Wright solution for observation of etch pits.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 48| Part 3| June 2015| Pages 645-654
https://doi.org/10.1107/S1600576715004926
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