Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction

Benediktovitch, A.; Zhylik, A.; Ulyanenkova, T.; Myronov, M.; Ulyanenkov, A.

doi:10.1107/S1600576715005397

Journal of Applied Crystallography Journal of Applied
Crystallography

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Figure 3
An example of a measured RSM of the 242 reflection, characterized by parameters a, b, $[\psi]$ (left), and results of theoretical calculations (right). The dashed green line is the isointensity contour at the 1/e level, while the red solid line corresponds to fitting by an ellipse with the parameters a, b, $[\psi]$ . The intensity between the isocontours changes by a factor of 2^1/2.

JOURNAL OF
APPLIED
CRYSTALLOGRAPHY

ISSN: 1600-5767

Volume 48| Part 3| June 2015| Pages 655-665

https://doi.org/10.1107/S1600576715005397

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