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Figure 2
The critical radius of curvature, calculated as a function of energy for the conditions βΛ = 1 (Rc1) and βΛ = π2 ([R_{{\rm c} \pi^2}]) for Si and GaAs (top and bottom panels, respectively), in the case of the 111 and 220 reflections.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 48| Part 3| June 2015| Pages 666-671
https://doi.org/10.1107/S1600576715006809
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